LP3407LT1G_15 Datasheet, PDF (3/6 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
LP3407LT1G , S-LP3407LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
30
-6V
25
-10V
20
-4.5V
15
-4V
10
5
V_GS=-3.5V
0
0
1
2
3
4
5
-V_DS (Volts)
Fig 1: On-Region Characteristics (Note E)
80
70
60
V_GS=-4.5V
50
40
30
20
V_GS=-10V
10
0
2
4
6
8
10
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
120
I_D=-4A
100
80
125°C
60
40
25°C
20
2
4
6
8
10
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
30
V_DS=-5V
25
20
15
10
125°C
5
25°C
0
0.5
1.5
2.5
3.5
4.5
5.5
-V_GS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
V_GS=-10V
I_D=-4A
1.4
1.2
1
17
5
2
V_GS=-4.5V¹⁰
I_D=-3A
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem₁₈perature
(Note E)
1.0E+02
1.0E+01
1.0E+⁴0⁰0
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev .O 3/6