LP3407LT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
V_DS
I _D (V _GS = -10V)
R_DS(ON) (V_GS = -10V)
R_DS(ON) (V_GS = -4.5V)
-30V
-4.1A
< 70mΩ
< 100m Ω
FEATURES
The LP3407LT1G uses advanced trench technology to provide
excellent R_DS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Req uiring Uniq ue
Site and Control Change Req uirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
LP3407LT1G
S-LP3407LT1G
LP3407LT3G
S-LP3407LT3G
Marking
A07
A07
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP3407LT1G
S-LP3407LT1G
3
1
2
SOT– 23 (TO–236AB)
D
G
S
MAXIMUM RATINGS (T_A = 25^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
T_A=25°C
Power Dissipation ^B T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J, T_STG
Maximum
-30
±20
-4.1
-3.5
-25
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (T_A = 25^oC unless otherwise noted)
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A D Steady-State}
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
Units
90
°C/W
125
°C/W
80
°C/W
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
Rev .O 1/6