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| LP3407LT1G_15 Datasheet, PDF (2/6 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=-250µA, VGS=0V
-30
VDS=-24V, VGS=0V
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
-1
VGS=-10V, VDS=-5V
-25
VGS=-10V, ID=-4.1A
TJ=125°C
VGS=-4.5V, ID=-3A
gFS
Forward Transconductance
VDS=-5V, ID=-4A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
415
VGS=0V, VDS=-15V, f=1MHz
70
40
VGS=0V, VDS=0V, f=1MHz
3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7.4
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
3.7
VGS=-10V, VDS=-15V, ID=-4A
1.3
Qgd
Gate Drain Charge
1.3
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6â¦,
tD(off)
Turn-Off DelayTime
RGEN=3â¦
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
8.8
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
4
Typ Max Units
V
-1
µA
-5
±100 nA
-2
-3
V
A
70
mâ¦
95
100 mâ¦
10
S
-0.7 -1
V
-2
A
520 625 pF
100 130 pF
65
90
pF
7.5 11.5 â¦
9.2 11 nC
4.6
6
nC
1.6 1.9 nC
2.2 3.1 nC
7.5
ns
5.5
ns
19
ns
7
ns
11
13
ns
5.3 6.4 nC
Rev .O 2/6
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