LP3401LT1G_15 Datasheet, PDF (3/5 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
LP3401LT1G , S-LP3401LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
25.00
20.00
-10V
15.00
10.00
-4.5V
-3V
-2.5V
5.00
V_GS=-2V
0.00
0.00 1.00 2.00 3.00 4.00 5.00
-V_DS (Volts)
Fig 1: On-Region Characteristics
120
100
80
V_GS=-2.5V
60
V_GS=-4.5V
40
V_GS=-10V
20
0.00
2.00
4.00
6.00
8.00 10.00
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
I_D=-2A
130
110
90
125°C
70
50
25°C
30
10
0
2
4
6
8
10
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
10
V_DS=-5V
8
6
4
125°C
2
25°C
0
0
0.5
1
1.5
2
2.5
3
-V_GS(Volts)
Figure 2: Transfer Characteristics
1.8
1.6
I_D=-3.5A, V_GS=-4.5V
I_D=-3.5A, V_GS=-10V
1.4
1.2
V_GS=-2.5V
I_D=-1A
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD (Volts)
Figure 6: Body-Diode Characteristics
Rev .O 3/5