LP3401LT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
LP3401LT1G
S-LP3401LT1G
V_DS (V) = -30V
R_DS(ON) < 70mΩ (V_GS = -10V)
R_DS(ON) < 80mΩ (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -2.5V)
FEATURES
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LP3401LT1G
S-LP3401LT1G
LP3401LT3G
S-LP3401LT3G
Marking
A1
A1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SOT– 23 (TO–236AB)
3_D
G
1
S
2
MAXIMUM RATINGS (T_A = 25^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J, T_STG
Maximum
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
65
85
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
Rev .O 1/5