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| LP3401LT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
Min
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
-30
TJ=55°C
-0.7
-25
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
gFS
Forward Transconductance
VDS=-5V, ID=-5A
7
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=3.6â¦,
RGEN=6â¦
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Typ Max Units
V
-1
µA
-5
±100 nA
-1 -1.3 V
A
70 mâ¦
80 mâ¦
120 mâ¦
11
S
-0.75 -1
V
-2.2 A
954
pF
115
pF
77
pF
6
â¦
9.4
nC
2
nC
3
nC
6.3
ns
3.2
ns
38.2
ns
12
ns
20.2
ns
11.2
nC
Rev .O 2/5
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