LP2301LT1G_15 Datasheet, PDF (3/5 Pages) Leshan Radio Company – 20V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
LP2301LT1G , S-LP2301LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
18
16
14
12
10
8
6
4
2
0
0
Vds=5V
25°C
0.5
1
1.5
2
Vgs, GATE-TO-SOURCE VOLTAGE(V)
Figure 1. Transfer Characteristics
20
18
25°C
Vgs=2.5V
16
14
Vgs=2V
12
10
8
6
Vgs=1.5V
4
2
0
2.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vds,DRAIN-TO-SOURCE VOLTAGE(V)
Figure 2. On–Region Characteristics
0.5
0.5
0.45
0.45
0.4
0.4
0.35
0.3
Vgs=1.5V
0.35
0.3
0.25
0.2
0.15
Vgs=2V
0.25
0.2
0.15
Id=3.5A
0.1
0.1
0.05
Vgs=2.5V
0.05
0
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
Id-Drain current
Vgs-Gate-to-Source Voltage(V)
Figure 3. On–Resistance versus Drain Current
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/5