LP2301LT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 20V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
Marking
LP2301LT1G
S-LP2301LT1G
01
LP2301LT3G
S-LP2301LT3G
01
Shipping
3000/Tape & Reel
10,000/Tape & Reel
LP2301LT1G
S-LP2301LT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current 1)
I_DM
Maximum Power Dissipation
TA = 25^oC
P_D
TA = 75^oC
Operating Junction and Storage Temperature Range
T_J, T_stg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
R_qJC
R_qJA
Limit
-20
±8
-2.3
-8
0.9
0.57
-55 to 150
140
Unit
V
A
W
o_C
o_C/W
Rev .O 1/5