LP2301LT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – 20V P-Channel Enhancement-Mode MOSFET

ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
BV_DSS
R_DS(on)
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Gate Resistance
Rg
Forward Transconductance
g_fs
Dynamic ³⁾
Total Gate Charge
Q_g
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Source-Drain Diode
Max. Diode Forward Current
I_S
Diode Forward Voltage
V_SD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
LESHAN RADIO COMPANY, LTD.
LP2301LT1G , S-LP2301LT1G
Test Condition
Min
Typ
Max Unit
V_GS = 0V, I_D = -250uA
V_GS = -4.5V, I_D = -2.8A
V_GS = -2.5V, I_D = -2.0A
V_DS =V_GS, I_D = -250uA
V_DS = -9.6V, V_GS = 0V
V_GS = ±8V, V_DS = 0V
-20
-0.40
V_DS = -5V, I_D = -4.0A
-
-
V
69
100
mΩ
83
150
mΩ
-0.90
V
-1
uA
±100 nA
Ω
6.5
S
V_DS = -6V, I_D = -2.8A
V_GS = -4.5V
V_DD = -6V, R_L = 6Ω
Ι_D = −1Α, V_GEN = -4.5V
R_G = 6Ω
V_DS = -6V, V_GS = 0V
f = 1.0 MHz
15.23
5.49
nC
2.74
17.28
3.73
ns
36.05
6.19
882.51
145.54
pF
97.26
I_S = -0.75A, V_GS = 0V
-2.4
A
-0.8
-1.2
V
Rev .O 2/5