LMGSF1N02LT1 Datasheet, PDF (3/4 Pages) Leshan Radio Company – Power MOSFET 750 mAmps, 20 Volts

0.2
150°C
0.18
0.16 _{VGS = 4.5 V}
0.14
0.12
0.1
25°C
-55°C
0.08
0.06
0.04
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
LESHAN RADIO COMPANY, LTD.
LMGSF1N02LT1
0.14
0.13
0.12
0.11 ^{VGS = 10 V}
150°C
0.1
0.09
25°C
0.08
0.07
-55°C
0.06
0.05
0.04
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-ā55
VGS = 10 V
ID = 2 A
VGS = 4.5 V
ID = 1 A
-5
45
95
145
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with Temperature
10
VDS = 16 V
TJ = 25°C
8
6
4
ID = 2.0 A
2
0
0
1000 2000 3000 4000 5000 6000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
1
1000
0.1
TJ = 150°C
25°C
-55°C
100
0.01
0.001
0
0.2
0.4
0.6
0.8
VSD, DIODE FORWARD VOLTAGE (VOLTS)
10
1
0
Figure 7. Body Diode Forward Voltage
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
Coss
Crss
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 8. Capacitance
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