LMGSF1N02LT1 Datasheet, PDF (2/4 Pages) Leshan Radio Company – Power MOSFET 750 mAmps, 20 Volts

LESHAN RADIO COMPANY, LTD.
LMGSF1N02LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
–
–
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
Ciss
–
Coss
–
Transfer Capacitance
(VDG = 5.0 Vdc)
Crss
–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 Ω)
td(on)
–
tr
–
td(off)
–
Fall Time
Gate Charge (See Figure 6)
tf
–
QT
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
–
Pulsed Current
ISM
–
Forward Voltage (Note 2.)
VSD
–
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
Typ
Max
Unit
1.7
2.4
Vdc
0.075
0.115
0.090
0.130
Ohms
125
–
pF
120
–
45
–
2.5
–
ns
1.0
–
16
–
8.0
–
6000
–
pC
–
0.6
A
–
0.75
0.8
–
V
2.5
VDS = 10 V
2
1.5
1
-55°C
TJ = 150°C
0.5
25°C
0
1
1.5
2
2.5
3
3.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
3
4V
2.5
3.5 V
2
1.5
3.25 V
VGS = 3.0 V
1
2.75 V
0.5
2.5 V
2.25 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
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