LMGSF1N02LT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Power MOSFET 750 mAmps, 20 Volts

LESHAN RADIO COMPANY, LTD.
Power MOSFET
750 mAmps, 20 Volts
N–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
20
VGS
± 20
ID
IDM
PD
TJ, Tstg
750
2000
400
– 55 to
150
Thermal Resistance – Junction–to–Ambient R_θJA
300
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
LMGSF1N02LT1
3
1
2
SOT-23
N–Channel
3
––
1
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
V(BR)DSS 20
IDSS
–
–
IGSS
–
DEVICE MARKING
LMGSF1N02LT1=N2
Typ
Max
Unit
–
–
Vdc
µAdc
–
1.0
–
10
–
±100
nAdc
LMGSF1N02LT1-1/4