LMBT6428LT1G_11 Datasheet, PDF (3/5 Pages) Leshan Radio Company – Amplifier Transistors NPN Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
I C = 10 mA
R S ^~~ 0
30
BANDWIDTH = 1.0 Hz
20
R S ~~ 0
3.0 mA
10
1.0 mA
7.0
5.0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
3.0
10 20
300 µA
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
3.0
0.01 0.02 0.05 0.1 0.2
100 kHz
0.5 1.0 2.0
5.0 10
I C , COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
10
7.0
BANDWIDTH = 1.0 Hz
5.0
I C = 10 mA
3.0
3.0 mA
2.0
1.0
1.0 mA
0.7
0.5
300 µA
0.3
100 µA
0.2
R S ^~~ 0
0.1
10 µA
30 µA
10 20 50 100 200 500 1k 2k 5k 10k 20k
50k 100k
f, FREQUENCY (Hz)
Figure 4. Noise Current
2.0
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
I C = 1.0 mA
8.0
500 µA
100 µA
4.0
10 µA
0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
R S , SOURCE RESISTANCE (Ω)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200 _{BANDWIDTH = 1.0 Hz}
I C = 10 mA
100
3.0 mA
70
1.0 mA
50
300 µA
30
100 µA
20
30 µA
10
7.0
10 µA
5.0
3.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
20
16
I C = 10 mA
3.0 mA
1.0 mA
12
8.0
4.0
BANDWIDTH = 1.0 Hz
0
10 20
50 100 200 500 1k 2k
300 µA
100 µA
30 µA
10 µA
5k 10k 20k 50k 100k
R S , SOURCE RESISTANCE (Ω)
Figure 6. Total Noise Voltage
R S , SOURCE RESISTANCE (Ω)
Figure 7. Noise Figure
Rev.O 3/5