LMBT6428LT1G_11 Datasheet, PDF (1/5 Pages) Leshan Radio Company – Amplifier Transistors NPN Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
z ^{We declare that the material of product}
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT6428LT1G
LMBT6428LT3G
LMBT6429LT1G
LMBT6429LT3G
1KM
1KM
M1L
M1L
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
LMBT6428LT1G
LMBT6429LT1G
3
1
2
MAXIMUM RATINGS
Rating
Value
Symbol 6428LT1 6429LT1 Unit
Collector–Emitter Voltage
V CEO
50
45 Vdc
Collector–Base Voltage
V CBO
60
55 Vdc
Emitter–Base Voltage
V EBO
6.0
Vdc
Collector Current — Continuous I C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
1
BASE
2
EMITTER
DEVICE MARKING
LMBT6428LT1G = 1KM, LMBT6429LT1G = M1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc, I B = 0)
LMBT6428LT1G
50
(I C = 1.0 mAdc, I B = 0)
LMBT6429LT1G
45
Collector–Base Breakdown Voltage
V (BR)CBO
(I C = 0.1mAdc, I E = 0)
LMBT6428LT1G
60
(I C = 0.1mAdc, I E = 0)
LMBT6429LT1G
55
Collector Cutoff Current
I CES
( V CE = 30Vdc, )
—
Collector Cutoff Current
I CBO
( V CB = 30Vdc, I E = 0 )
—
Emitter Cutoff Current
( V EB = 5.0Vdc, I C= 0)
I EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
Vdc
—
—
Vdc
—
—
µAdc
0.1
µAdc
0.01
0.01
µAdc
Rev.O 1/5