LMBT6428LT1G_11 Datasheet, PDF (2/5 Pages) Leshan Radio Company – Amplifier Transistors NPN Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 0.01 mAdc, V CE = 5.0 Vdc)
hFE
LMBT6428LT1G
LMBT6429LT1G
(I C = 0.1 mAdc, V CE _{= 5.0 Vdc)}
LMBT6428LT1G
LMBT6429LT1G
(I C = 1.0 mAdc, V CE _{= 5.0 Vdc)}
LMBT6428LT1G
LMBT6429LT1G
(I C = 10 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 0.5 mAdc)
(I C = 100 mAdc, I B = 5.0 mAdc)
Base–Emitter On Voltage
(I C = 1.0 mAdc, V CE = 5.0mAdc)
VCE(sat)
V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
f_T
C obo
C ibo
Min
250
500
250
500
250
500
250
500
––
––
0.56
100
––
––
Max
Unit
––
—
—
650
1250
—
—
—
—
Vdc
0.2
0.6
0.66
Vdc
700
MHz
3.0
pF
8.0
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/5