LTC4011_15 Datasheet, PDF (4/26 Pages) Linear Technology – High Efficiency Standalone Nickel Battery Charger

LTC4011
Electrical Characteristics The l indicates specifications which apply over the full operating
temperature range, otherwise specifications are at T_A = 25°C. V_CC = 12V, BAT = 4.8V, GND = PGND = 0V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX UNITS
T_MAXC
Maximum Fast Charge Temperature
V_TEMP Decreasing, Fast Charge
l
57
60
63
°C
(Note 8)
V_TEMP(D) V_TEMP Disable Threshold Voltage
V_TEMP(P) Pause Threshold Voltage
Charger Timing
l
2.8
l
130
3.3
V
280
mV
∆t_TIMER
Internal Time Base Error
∆t_MAX
Programmable Timer Error
PowerPath Control
R_TIMER = 49.9k
l
–10
l
–20
10
%
20
%
V_FR
INFET Forward Regulation Voltage
V_OL(INFET) Output Voltage Low
V_OH(INFET) Output Voltage High
t_OFF(INFET) INFET OFF Delay Time
Status and Chemistry Select
DCIN – V_CC
V_CC – INFET, No Load
V_CC – INFET, No Load
C_LOAD = 10nF, INFET to 50%
l
15
55
100
mV
l 3.75
5.2
7
V
l
0
50
mV
3
15
µs
V_OL
Output Voltage Low (I_LOAD = 10mA)
V_CDIV
l
All Other Status Outputs
l
435
700
mV
300
600
mV
I_LKG
I_IH(VCDIV)
V_IL
V_IH
I_IL
I_IH
Output Leakage Current
Input Current High
Input Voltage Low
Input Voltage High
Input Current Low
Input Current High
All Status Outputs Inactive, V_OUT = V_CC ^l
–10
V_CDIV = V_BAT (Shutdown)
l
–1
CHEM (NiMH)
l
CHEM (NiCd)
l 2.85
CHEM = GND
l
–20
CHEM = 3.3V
l
–20
10
µA
1
µA
900
mV
V
–5
µA
20
µA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4011C is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the 0°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: Operating junction temperature T_J (in °C) is calculated from
the ambient temperature T_A and the total continuous package power
dissipation P_D (in watts) by the formula:
T_J = T_A + θ_JA • P_D
Refer to the Applications Information section for details. This IC includes
overtemperature protection that is intended to protect the device during
momentary overload conditions. Junction temperature will exceed 125°C
when overtemperature protection is active. Continuous operation above
the specified maximum operating junction temperature may result in
device degradation or failure.
Note 4: All current into device pins is positive. All current out of device
pins is negative. All voltages are referenced to GND, unless otherwise
specified.
Note 5: These limits are guaranteed by correlation to wafer level
measurements.
Note 6: Output current may be limited by internal power dissipation. Refer
to the Applications Information section for details.
Note 7: Either TGATE V_OH may apply for 7.5V < V_CC < 9V.
Note 8: These limits apply specifically to the thermistor network shown in
Figure 5 in the Applications Information section with the values specified
for a 10k NTC (β of 3750). Limits are then guaranteed by specific V_TEMP
voltage measurements during test.
4011fb