LTC3408_15 Datasheet, PDF (2/12 Pages) Linear Technology – 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor

LTC3408
ABSOLUTE AXI U RATI GS
(Note 1)
Input Supply Voltage (< 300µs) .................. – 0.3V to 6V
Input Supply Voltage (DC) ....................... – 0.3V to 5.5V
RUN, REF, V_OUT Voltages .......................... – 0.3V to V_IN
SW Voltage (DC) ......................... – 0.3V to (V_IN + 0.3V)
P-Channel Switch Source Current (DC) ............. 800mA
N-Channel Switch Sink Current (DC) ................. 800mA
Peak SW Sink and Source Current ........................ 1.3A
Bypass P-Channel FET Source Current (DC) .............. 1A
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Junction Temperature (Note 3) ............................ 125°C
Storage Temperature Range ................ – 65°C to 125°C
UW U
PACKAGE/ORDER I FOR ATIO
TOP VIEW
V_OUT 1
8 V_OUT
V_IN 2
9
7 V_IN
GND 3
6 REF
SW 4
5 RUN
DD PACKAGE
8-LEAD (3mm × 3mm) PLASTIC DFN
EXPOSED PAD IS GND (PIN 9)
MUST BE SOLDERED TO PCB
T_JMAX = 125°C, θ_JA = 43°C/ W, θ_JC = 3°C/ W
ORDER PART
NUMBER
LTC3408EDD
DD PART MARKING
LAEA
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are T_A = 25°C.
V_IN = 3.6V unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
V_OUT
Regulated Output Voltage
∆V_OUT
I_PK
V_LOADREG
V_IN
I_S
f_OSC
Output Voltage Line Regulation
Peak Inductor Current
Output Voltage Load Regulation
Input Voltage Range
Input Current
Shutdown Current
Oscillator Frequency
V_REF
R_PFET
Bypass PFET Turn-Off Threshold
Bypass PFET Turn-On Threshold
R_DS(ON) of P-Channel FET
R_NFET
R_DS(ON) of N-Channel FET
R_BYPASS R_DS(ON) of Bypass P-Channel FET
I_LSW
I_LBYP
V_RUN
I_RUN
I_REF
SW Leakage
Bypass PFET Leakage
RUN Threshold
RUN Input Current
REF Input Current
V_REF = 1.1V
V_REF = 0.1V
V_IN = 2.5V to 5V, V_REF = 0.6V
V_IN = 3V, V_REF = 0.9V
V_RUN = 1.2V, SW = Open
V_RUN = 0V, SW = Open
V_REF≥ 0.25V
V_REF ≤ 0.1V
V_REF =
V_REF =
I_SW = 160mA, Wafer Level
I_SW = 160mA, DD Package
I_SW = –160mA, Wafer Level
I_SW = –160mA, DD Package
I_OUT = 100mA, V_IN = 3V, Wafer Level
I_OUT = 100mA, V_IN = 3V, DD Package (Note 4)
V_RUN = 0V, V_SW = 0V or 5V, V_IN = 5V
V_OUT = 0V, V_IN = 5V, V_REF = 0V
V_RUN = 0V or 2.5V
● 3.23
3.3
3.37
● 0.25
0.3
0.35
●
0.1
0.4
0.70
1
1.25
0.7
● 2.5
5
1.5
2.5
0.1
1
● 1.2
1.5
1.8
550 700 850
1.167 1.2
1.21 1.26
0.3
0.4
0.4
0.3
0.4
0.4
0.05 0.08
0.08
±0.01 ±1
±0.01 ±1
● 0.3
1
1.5
●
±0.01 ±1
●
±0.01 ±1
UNITS
V
V
%/V
A
%
V
mA
µA
MHz
kHz
V
V
Ω
Ω
Ω
Ω
Ω
Ω
µA
µA
V
µA
µA
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LTC3408E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: T_J is calculated from the ambient temperature T_A and power
dissipation P_D according to the following formula:
LTC3408: T_J = T_A + (P_D)(43°C/W)
3408f
2