SI4558DY Datasheet, PDF (5/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

SMD Type
MOSFET
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
■ P-MOSFET Typical Characterisitics
Output Characteristics
30
V_GS = 10, 9, 8, 7, 6, 5 V
24
Transfer Characteristics
30
T_C = –55^bC
24
25^bC
18
18
125^bC
4V
12
12
6
0
0
0.20
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
2000
Capacitance
0.15
1500
C_iss
0.10
V_GS = 4.5 V
0.05
V_GS = 10 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 6 A
6
4
2
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
1000
C_oss
500
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
V_GS = 10 V
1.6
I_D = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
T_J – Junction Temperature (^bC)
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