SI4558DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

SMD Type
MOSFET
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
■ N-MOSFET Typical Characterisitics
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150^bC
0.08
10
0.06
1
0
0.4
T_J = 25^bC
0.2 ^{0.4 0.6 0.8 1.0 1.2 1.4}
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.04
I_D = 6 A
0.02
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
40
0.2
I_D = 250 A
32
–0.0
24
–0.2
16
–0.4
–0.6
–0.8
–50
0
50
100
T_J – Temperature (^bC)
.
150
8
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
10^–3
Single Pulse
10^–2
10^–1
Square Wave Pulse Duration (sec)
4 _{www.kexin.com.cn}
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
t₂
R_thJA
=
52^bC/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30