SI4558DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

SMD Type
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
MOSFET
■ Features
● N-Channel：VDS=30V ID=6A
●
RDS(ON) ＜ 40mΩ (VGS = 10V)
●
RDS(ON) ＜ 60mΩ (VGS = 4.5V)
● P-Channel：VDS=-30V ID=-6A
●
RDS(ON) ＜ 40mΩ (VGS =-10V)
●
RDS(ON) ＜ 70mΩ (VGS =-4.5V)
SOP-8
1.50 0.15
1 Source1
2 Gate1
3 Source2
4 Gate2
5 Drain
6 Drain
7 Drain
8 Drain
D
S2
S1
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current @ TJ=150℃ (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Junction Temperature
Storage Temperature Range
Ta = 25 ℃
Ta = 70 ℃
Ta = 25 ℃
Ta = 70 ℃
Note.1:Surface Mounted on FR4 Board, t ≤ 10 sec.
G2
G1
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
N-Channel P-Channel
30
-30
±20
6
-6
4.7
-4.7
30
-30
2.4
1.5
52
150
-55 to 150
Unit
V
A
W
℃/W
℃
■ Marking
Marking
4558
KA****
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