BFP740 Datasheet, PDF (5/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

SMD Type
Transistors
NPN Transistors
■ Typical Characterisitics
BFP740 (KFP740)
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 25 mA
f = parameter
Noise figure F = ƒ(I_C)
V_CE = 3V, f = parameter
Z_S = Z_Sopt
36
2
32
1.8
0.90GHz
1.6
28
1.80GHz
2.40GHz
1.4
f = 6GHz
24
3.00GHz
f = 5GHz
f = 3GHz
4.00GHz
1.2
f = 1.8GHz
20
f = 0.9GHz
5.00GHz
1
6.00GHz
16
0.8
12
0.6
8
0.4
4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V [V]
CE
0
0
5
10
15
20
25
30
I [mA]
c
Noise figure F = ƒ(I_C)
V_CE = 3V, f = 1.8 GHz
Noise figure F = ƒ(f)
V_CE = 3 V, Z_S = Z_Sopt
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Z = 50Ω
S
Z =Z
S
Sopt
5
10
15
20
25
30
I [mA]
c
1.4
1.2
1
0.8
0.6
I = 25mA
C
0.4
I = 8mA
C
0.2
0
0
1
2
3
4
5
6
7
f [GHz]
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