BFP740 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

SMD Type
NPN Transistors
BFP740 (KFP740)
Transistors
■ Features
● High gain ultra low noise RF transistor
● High maximum stable gain
● Gold metallization for extra high reliability
● 150 GHz fT-Silicon Germanium technology
● Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
SOT-343
2 ±0.2
1.3
4
3
1
0.3
+0.1
-0.05
4x
0.1 M
0.15
2
0.6
+0.1
-0.05
Uint: mm
0.9 ±0.1
0.1 MAX.
0.1
A
0.15
+0.1
-0.05
0.2 M A
1 Base 3 Collector
2 Emitter 4 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Collector - Emitter Voltage Ta > 0°C
Ta ≤ 0°C
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction - soldering point
Junction Temperature
Ambient temperature
Storage Temperature Range
Symbol
VCBO
VCES
VCEO
VEBO
IC
IB
PC
RthJS
TJ
TA
Tstg
Rating
13
13
4
3.5
1.2
30
3
160
≤380
150
-65 to 150
-65 to 150
Unit
V
mA
mW
℃/W
℃
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