BFP740 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

SMD Type
Transistors
NPN Transistors
BFP740 (KFP740)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
DC current gain
Power gain, maximum stable
Power gain, maximum available
Noise figure
Transducer gain
Third order intercept point at output
1dB Compression point at output
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 5 V , IE= 0
ICES VCE= 13 V ,VEBE= 0
IEBO VEB= 1.2V , IC=0
hFE VCE= 3V, IC= 25mA
Gms
IC = 25 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz (Note.1)
Min Typ Max Unit
13
4 4.7
V
1.2
0.1
30 uA
3
160
400
27
Gma
IC = 25 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz (Note.1)
F
|S21e| ²
IP3
P-1dB
Ccb
Cce
Ceb
fT
IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
IC=25 mA,VCE =3 V, ZS = ZL =50 Ω,f=1.8GHz
IC=25 mA,VCE =3 V, ZS = ZL =50 Ω,f=6GHz
VCE =3 V, IC = 25 mA, ZS=ZL=50 Ω, f=1.8GHz
IC= 25 mA, VCE = 3 V, ZS=ZL=50 Ω,f = 1.8GHz
VCB= 3V, VBE= 0,f=1MHz
VCE= 3V, VBE= 0,f=1MHz
VEB= 0.5V, VCB= 0,f=1MHz
VCE= 3V, IC= 25mA,f=2GHz
17
dB
0.5
0.85
24.5
13.5
25
dBm
11
0.08 0.14
0.24
pF
0.44
42
GHz
Note.1: Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
■ Marking
Marking
R7s
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