AO3409-3 Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
AO3409 (KO3409)
MOSFIECT
■ Typical Characterisitics
10
9
V_DS=-15V
I_D=-2.6A
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
100.0
T_J(Max)=150°C
T_A=25°C
10.0
R_DS(ON)
limited
100µs
1ms
10µs
0.1s _10ms
1.0
1s
10s
DC
0.1
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
500
400
C_iss
300
200
C_oss
100
C_rss
0
0
5
10
15
20
25
30
-V_DS (Volts)
Figure 8: Capacitance Characteristics
20
T_J(Max)=₁1₈50°C
T_A=25°C
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P_D
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
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