AO3409-3 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
AO3409 (KO3409)
MOSFET
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
rDS(ON)
ID(ON)
gfs
Ciss
Coss
Crss
Rg
Testconditions
ID=250 A, VGS=0V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V ,TJ=55
VDS=0V, VGS= 20V
VDS=VGS ID=-250 A
VGS=-10V, ID=-2.6A
VGS=-10V, ID=-2.6A
TJ=125
VGS=-4.5V, ID=-2A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-5A
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
IS
VSD
VGS=-4.5V, VDS=-15V, ID=-2.6A
VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3
IF=-2.6A, dI/dt=100A/ s
IF=-2.6A, dI/dt=100A/ s
IS=-1A,VGS=0V
* Repetitive rating, pulse width limited by junction temperature.
Min Typ Max Unit
-30
V
-1
A
-5
100 nA
-1 -1.9 -3
V
97 130
m
135 150
166 200 m
-5
A
3 3.8
S
302 370 pF
50.3
pF
37.8
pF
12 18
6.8 9 nC
2.4
nC
1.6
nC
0.95
nC
7.5
ns
3.2
ns
17
ns
6.8
ns
16.8 22 ns
10
nC
-2
A
-0.82 -1
V
Marking
Marking
A9*
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