AO3409-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
AO3409 (KO3409)
MOSFET
Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130m (VGS = -10V)
RDS(ON) < 200m (VGS = -4.5V)
D
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
G
S
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Power Dissipation
TA=25
TA=70
Themal Resistance. Junction-to-Ambient
Themal Resistance. Junction-to-Case
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, TSTG
Rating
-30
20
-2.6
-2.2
-20
1.4
1
125
80
-55 to 150
Unit
V
V
A
W
/W
/W
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
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