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IRFR4105ZPBF Datasheet, PDF (8/11 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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IRFR/U4105ZPbF
+
Â
-
Â
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
+
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ⤠1 µs
Duty Factor ⤠0.1 %
+-VDD
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
8
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