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| IRFR4105ZPBF Datasheet, PDF (2/11 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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IRFR/U4105ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.053 âââ
âââ 19 24.5
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 18A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
16 âââ âââ S VDS = 15V, ID = 18A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 55V, VGS = 0V
âââ âââ 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 18 27
ID = 18A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
5.3
7.0
âââ
âââ
e nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 10 âââ
VDD = 28V
tr
Rise Time
âââ 40 âââ
ID = 18A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
26
24
âââ
âââ
e ns RG = 24.5 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 740 âââ
âââ 140 âââ
âââ 74 âââ
âââ 450 âââ
âââ 110 âââ
âââ 180 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 30
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 120
A showing the
integral reverse
âââ âââ 1.3
e p-n junction diode.
V TJ = 25°C, IS = 18A, VGS = 0V
âââ 19
âââ 14
29
21
e ns TJ = 25°C, IF = 18A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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