IRFR4105ZPBF Datasheet, PDF (4/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

IRFR/U4105ZPbF
1200
1000
800
600
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 18A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
10.0
TJ = 175°C
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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