IRF9540S Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_GS
R_g
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+V_DD
Fig. 12a - Unclamped Inductive Test Circuit
IRF9540S, SiHF9540S
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
2000
1600
1200
I_D
Top - 7.8 A
- 13 A
Bottom - 19 A
800
400
0 ^{VDD = - 25 V}
25
50
75
100 125
150 175
91079_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
2014-8-28
6
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