IRF9540S Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

20
16
12
8
4
0
25
91079_09
50
75 100 125 150 175
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9540S, SiHF9540S
V_DS
L
R_g
- 10 V
t_p
D.U.T.
I_AS
0.01 Ω
-
+ V_DD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
10
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10^-2
10^-5
91079_11
Single Pulse
(Thermal Response)
10^-4
10^-3
10^-2
0.1
t₁, Rectangular Pulse Duration (s)
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-28
5
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