IRF9540S Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF9540S, SiHF9540S
3000
2500
2000
1500
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1000
500
0
10⁰
91079_05
C_oss
C_rss
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹
175 °C
25 °C
10⁰
V_GS = 0 V
0.0
1.0
2.0
3.0
4.0
5.0
91079_07
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 _{ID = - 19 A}
V_DS = - 80 V
16
V_DS = - 50 V
12
V_DS = - 20 V
8
4
0
0
91079_06
For test circuit
see figure 13
10 20
30 40
50 60
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10³
5
2
10²
5
2
10
5
2
1
5
2
0.1
0.1 ²
Operation in this area limited
by R_DS(on)
100 µs
1 ms
10 ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
5 ₁ 2 5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91079_08
- V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
2014-8-28
4
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