IRF9Z24NS Datasheet, PDF (5/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

IRF9Z24NS/L
12
9
6
3
0
A
25
50
75
100
125
150
175
T_C , C ase Tem perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
V_DS
V_GS
R_G
R_D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
D = 0.50
1
0 .20
0.10
0.05
0.02
0 .0 1
0.1
S IN G LE P U L S E
(THE R MA L R ES PO NS E )
P_{D M}
t1
t2
N otes:
1. D uty factor D = t1 / t ₂
0.01
0.00001
0.0001
0.001
0.01
2. P eak TJ = P _{D M} x Z _{thJ C} + T _C
0.1
A
1
t₁ , Rectangular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-29
5
www.kersemi.com