IRF9Z24NS Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

IRF9Z24NS/L
l Advanced Process Technology
l Surface Mount (IRF9Z24NS)
l Low-profile through-hole (IRF9Z24NL)
l 175°C Operating Temperature
l P-Channel
l Fast Switching
l Fully Avalanche Rated
TO-262
TO-263
Description
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
G
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z24NL) is available for
low-profile applications.
D
V_DSS = -55V
R_DS(on) = 0.175Ω
I_D = -12A
S
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V…
Continuous Drain Current, V_GS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
-12
-8.5
-48
3.8
45
0.30
± 20
96
-7.2
4.5
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
3.3
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
2014-8-29
1
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