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IRF9Z24NS Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) | |||
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IRF9Z24NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
-55 âââ âââ V
âââ -0.05 âââ V/°C
âââ âââ 0.175 â¦
-2.0 âââ -4.0 V
2.5 âââ âââ S
âââ âââ -25 µA
âââ âââ -250
âââ âââ 100
nA
âââ âââ -100
âââ âââ 19
âââ âââ 5.1 nC
âââ âââ 10
âââ 13 âââ
âââ 55 âââ
ns
âââ 23 âââ
âââ 37 âââ
7.5
nH
âââ 350 âââ
âââ 170 âââ pF
âââ 92 âââ
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mAÂ
VGS = -10V, ID = -7.2A Â
VDS = VGS, ID = -250µA
VDS = -25V, ID = -7.2A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -7.2A
VDS = -44V
VGS = -10V, See Fig. 6 and 13 ÂÂ
VDD = -28V
ID = -7.2A
RG = 24â¦
RD = 3.7â¦, See Fig. 10 ÂÂ
Between lead,
and center of die contact
VGS = 0V
VDS = -25V
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) â¢
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ -12
âââ âââ -48
âââ âââ -1.6
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -7.2A, VGS = 0V Â
âââ 47 71 ns TJ = 25°C, IF = -7.2A
âââ 84 130 nC di/dt = -100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 3.7mH
RG = 25â¦, IAS = -7.2A. (See Figure 12)
 ISD ⤠-7.2A, di/dt ⤠-280A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Uses IRF9Z24N data and test conditions
2014-8-29
2
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