IRF9530NS Datasheet, PDF (5/10 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

14
12
10
8
6
4
2
0
25
50
75
100 125 150 175
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF9530NS/L
V_DS
V_GS
R_G
R_D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0 .0 5
0.1
0 .0 2
0 .0 1
SING LE PU LS E
(THERMAL RESPONSE)
P_{D M}
t1
t2
Notes:
1. Duty factor D = t1 / t ₂
0.01
0.00001
0.0001
0.001
2. P eak TJ = P _{D M} x Z _{th JC} + T _C
A
0.01
0.1
1
t₁ , R ectangular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-26
5
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