IRF9530NS Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

IRF9530NS/L
2000
1600
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SH OR TE D
C _rss = C _gd
C _oss = C _ds + C _gd
1200
C iss
800
C oss
C rss
400
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -8.4A}
15
V_DS = -80V
V_DS = -50V
V_DS = -20V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150°C
10
T_J = 25°C
1
0.1
0.4
VG S = 0V _A
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
1
1
10
10ms
100
-V_DS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2014-8-26
4
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