IRF9530NS Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

IRF9530NS/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 ––– ––– V
––– -0.11 ––– V/°C
––– ––– 0.20 Ω
-2.0 ––– -4.0 V
3.2 ––– ––– S
––– ––– -25 _µA
––– ––– -250
––– ––– 100
nA
––– ––– -100
––– ––– 58
––– ––– 8.3 nC
––– ––– 32
––– 15 –––
––– 58 –––
ns
––– 45 –––
––– 46 –––
––– _7.5 ––– nH
––– 760 –––
––– 260 ––– pF
––– 170 –––
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA…
V_GS = -10V, I_D = -8.4A „
V_DS = V_GS, I_D = -250µA
V_DS = -50V, I_D = -8.4A…
V_DS = -100V, V_GS = 0V
V_DS = -80V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = -8.4A
V_DS = -80V
V_GS = -10V, See Fig. 6 and 13 „…
V_DD = -50V
I_D = -8.4A
R_G = 9.1Ω
R_D = 6.2Ω, See Fig. 10 „
Between lead,
and center of die contact
V_GS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) …
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -14
––– ––– -56
––– ––– -1.6
MOSFET symbol
D
A ^{showing the}
integral reverse
G
p-n junction diode.
S
V T_J = 25°C, I_S = -8.4A, V_GS = 0V „
––– 130 190 ns T_J = 25°C, I_F = -8.4A
––– 650 970 nC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L =7.0mH
R_G = 25Ω, I_AS = -8.4A. (See Figure 12)
ƒ I_SD ≤ -8.4A, di/dt ≤ -490A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF9530N data and test conditions
2014-8-26
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