KSM830 Datasheet, PDF (4/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KERSMI ELECTRONIC CO.,LTD.
KSM830
Figure 5. Gate Charge Characteristics
Figure 6. Capacitance vs.
Drain-to-Source Voltage
Figure7.Source-Drain Diode Forward Voltage
Figure 8.Maximum Safe Operating
Area
Figure 9. Transient Thermal Response Curve
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