KSM830 Datasheet, PDF (3/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM830
KERSMI ELECTRONIC CO.,LTD.
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by ,pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max. rating .The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃ unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure3 .Output Characteristics
Figure4. Normalized On-Resistance vs.
Temperature
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