KSM7N60NZ Datasheet, PDF (4/8 Pages) Kersemi Electronic Co., Ltd. – N-Channel UniFET ll MOSFET 600 V, 6.5 A, 1.25

KSM7N60NZ / KSMF7N60NZ
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
1.1
2.0
1.0
0.9
0.8
-100
* Notes :
1. V_GS = 0V
2. I_D = 250uA
-50
0
50
100
150
T_J, Junction Temperature [^oC]
1.5
1.0
0.5
0
-100
* Notes :
1. V_GS = 10V
2. I_D = 3.25A
-50
0
50
100
150
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
-FDPF7N60NZ
100
Figure 10. Maximum Drain Current
-FDP7N60NZ
100
10s
10
100s
1ms
1
Operation in This Area
is Limited by R _DS(on)
10ms
DC
0.1
0.01
1
* Notes :
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
10
100
V_DS, Drain-Source Voltage [V]
1000
30s
10
100s
1ms
10ms
1
Operation in This Area
DC
is Limited by R _DS(on)
0.1
0.01
1
* Notes :
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
10
100
V_DS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs Case Temperature
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
2014-6-30
4
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