KSM7N60NZ Datasheet, PDF (3/8 Pages) Kersemi Electronic Co., Ltd. – N-Channel UniFET ll MOSFET 600 V, 6.5 A, 1.25

KSM7N60NZ / KSMF7N60NZ
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
V_GS = 15.0 V
10
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
0.1
0.1
*Notes:
1. 250s Pulse Test
2. T_C = 25^oC
1
10 20
V_DS, Drain-Source Voltage[V]
Figure 2. Transfer Characteristics
100
10
1
0.1
4
150^oC
25^oC
-55^oC
* Notes :
1. V_DS = 20V
2. 250s Pulse Test
5
6
7
8
V_GS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
1.8
1.6
1.4
V_GS = 10V
1.2
V_GS = 20V
1.0
0.8
0
* Note : T_J = 25^oC
2 4 6 8 10 12 14
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
1000
C_iss
C_oss
100
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
10 Crss = Cgd
C_rss
* Note:
1. V_GS = 0V
2. f = 1MHz
1
0.1
1
10
30
V_DS, Drain-Source Voltage [V]
150^oC
10
25^oC
Notes:
1. V_GS = 0V
2. 250s Pulse Test
1
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 120V
8
V_DS = 300V
V_DS = 480V
6
4
2
* Note : I_D = 6.5A
0
0 2 4 6 8 10 12 14
Q_g, Total Gate Charge [nC]
2014-6-30
3
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