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KSM7N60NZ Datasheet, PDF (2/8 Pages) Kersemi Electronic Co., Ltd. – N-Channel UniFET ll MOSFET 600 V, 6.5 A, 1.25
◁
KSM7N60NZ / KSMF7N60NZ
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
KSM7N60NZ
Device
KSM7N60NZ
Package
TO-220
Reel Size
-
Tape Width
-
KSMF7N60NZ
KSMF7N60NZ
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
600
ID = 250A, Referenced to 25oC
-
VDS = 600V, VGS = 0V
-
VDS = 480V, TC = 125oC
-
VGS = ±25V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 3.25A
-
gFS
Forward Transconductance
VDS = 20V, ID = 3.25A
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 6.5A
VGS = 10V
-
-
-
-
-
(Note 4)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 6.5A
RG = 25
-
-
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.5A
-
trr
Reverse Recovery Time
VGS = 0V, ISD = 6.5A
-
Qrr
Reverse Recovery Charge
dIF/dt = 100A/s
-
Typ.
-
0.6
-
-
-
-
1.05
7.3
550
70
7
13
3
5.6
17.5
30
40
25
-
-
-
250
1.4
Max. Unit
-
V
-
V/oC
1
A
10
±10 A
5
V
1.25

-
S
730 pF
90
pF
10
pF
17
nC
-
nC
-
nC
45
ns
70
ns
90
ns
60
ns
6.5
A
26
A
1.4
V
-
ns
-
C
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =13mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 6.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
2014-6-30
2
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