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| KSM61N20 Datasheet, PDF (4/7 Pages) Kersemi Electronic Co., Ltd. – 200V N-Channel MOSFET | |||
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KSM61N20
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
â» Notes :
1. V = 0 V
GS
2. ID = 250 µ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
? Notes :
1. V = 10 V
GS
2. I = 30.5 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
103
70
10 µs
102
100 µs
60
1 ms
10 ms
50
101
DC 100 ms
40
Operation in This Area
is Limited by R
DS(on)
100
30
? Notes :
1. T = 25 oC
20
10-1
C
2. T = 150 oC
J
3. Single Pulse
10
10-2
0
100
101
102
25
V , Drain-Source Voltage [V]
DS
Figure 11. Transient Thermal Response Curve
50
75
100
125
150
T , Case Temperature [? ]
C
2014-7-1
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
single pulse
PDM
t1
t2
? N otes :
1 . Z (t) = 0 .3 ? /W M a x.
? JC
2 . D u ty F a cto r, D = t /t
12
3. T - T = P * Z (t)
JM
C
DM
? JC
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u are W a ve P u lse D u ra tio n [sec]
1
4
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