KSM61N20 Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – 200V N-Channel MOSFET

Features
• 61A, 200V, R_DS(on) = 0.041Ω @V_GS = 10 V
• Low gate charge ( typical 58 nC)
• Low C_rss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
KSM61N20
200V N-Channel MOSFET
TO-220
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Kersemi proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
D
{
z

G{
z
z
{
S
KSM61N20
200
61
38.5
244
±30
1440
61
41.7
4.5
417
3.3
-55 to +150
300
Min.
--
--
Max.
0.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
2014-7-1
1
www.kersemi.com