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| KSM61N20 Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – 200V N-Channel MOSFET | |||
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KSM61N20
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
í ? Notes :
1. 250 Pulse Test
2. T = 25?
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.06
0.05
102
101
150oC
25oC
100
2
4
-55oC
6
8
? Notes :
1. V = 40V
íDS
2. 250 Pulse Test
10
12
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
V = 10V
0.04
GS
0.03
0.02
0
V = 20V
GS
? Note : T = 25
J
25
50
75
100
125
150
I , Drain Current [A]
D
101
150?
25?
? Notes :
1. V = 0V
íGS
2. 250 Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
6000
4000
C
oss
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
2000
0
10-1
? Note ;
C
1. V = 0 V
GS
rss
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
V = 40V
10
DS
V = 100V
DS
V = 160V
8
DS
6
4
2
? Note : I = 61A
D
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
2014-7-1
3
www.kersemi.com
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