IRFR9N20DPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U9N20DPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
Coss
10
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.6A
16
12
V_DS = 160V
V_DS = 100V
V_DS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 175° C
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100us
1ms
1
10ms
T_C = 25°C
T_J = 175°C
Single Pulse
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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