IRFR9N20DPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
1
0.1
0.1
5.5V
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFR/U9N20DPbF
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.1
20µs PULSE WIDTH
TJ= 175 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10 _{TJ = 175°C}
T_J = 25°C
1
0.1
4
V _DS= 50V
20µs PULSE WIDTH
6
8
10
12
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ID = 9.4A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3