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| IRFR9N20DPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR/U9N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
200
âââ
âââ
3.0
âââ âââ
0.23 âââ
âââ 0.38
âââ 5.5
V
V/°C
â¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 5.6A Â
VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
4.3 âââ âââ S VDS = 50V, ID = 5.6A
Qg
Total Gate Charge
âââ 18 27
ID = 5.6A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 4.7 7.1
âââ 9.0 14
nC VDS = 160V
VGS = 10V, Â
td(on)
Turn-On Delay Time
âââ 7.5 âââ
VDD = 100V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 16 âââ ns ID = 5.6A
âââ 13 âââ
RG = 11â¦
âââ 9.3 âââ
VGS = 10V Â
Ciss
Input Capacitance
âââ 560 âââ
VGS = 0V
Coss
Output Capacitance
âââ 97 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 29 âââ pF Æ = 1.0MHz
Coss
Output Capacitance
âââ 670 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 40 âââ
âââ 74 âââ
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
100
5.6
8.6
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
âââ
1.75
âââ
50
°C/W
âââ
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 9.4
A showing the
integral reverse
G
âââ âââ 38
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V Â
âââ 130 âââ ns TJ = 25°C, IF = 5.6A
âââ 560 âââ nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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