IRFR3707PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U3707PbF
3000
2500
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1500
1000
C_oss
500
0
1
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = 24.8A}
8
V_DS = 15V
6
4
2
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100us
10
1ms
10ms
T_C = 25° C
T_J = 175° C
Single Pulse
1
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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